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Infineon adds 40 V device in PQFN to its OptiMOS™ Source-Down power MOSFET family

Infineon adds 40 V device in PQFN to its OptiMOS™ Source-Down power MOSFET family

Contemporary power system designs demand high power density levels and small form factors to maximize system-level performance. Infineon Technologies AG tackles this challenge by focusing on system innovation with enhancements on the component level. Adding to the 25 V device introduced in February, Infineon now brings the OptiMOS™ 40 V low-voltage power MOSFET to the market.

It is packaged in the Source-Down (SD) PQFN with a 3.3 x 3.3 mm 2 footprint. The 40 V SD MOSFET primarily addresses SMPS for server, telecom, and OR-ing, as well as battery protection, power tool, and charger applications.

The SD package features silicon that is being flipped upside down inside of the component. With that, the source potential is connected to the PCB over the thermal pad instead of the drain potential. In the end, this variant can lead to a major reduction of R DS(on) by up to 25 percent compared to the current technology. The thermal resistance between junction to case (R thJC) is also significantly improved compared to the traditional PQFN packages. The SD OptiMOS can withstand high continuous currents of up to 194 A. Additionally, the optimized layout possibilities and the more efficient utilization of the PCB allow for greater design flexibility together with highest performance.

Availability

The OptiMOS SD 40 V low-voltage power MOSFET is available in two versions, standard and Center-Gate. The Center-Gate variant is optimized for parallel operation of multiple devices. Both variants in the PQFN 3.3 x 3.3 mm 2 package can be ordered now. More information is available at www.infineon.com/source-down.

2020110201 / 02.11.2020 / Electronic-components / Infineon Technologies AG /

1200 V level-shift three-phase SOI EiceDRIVER™ offers superior robustness
1200 V level-shift three-phase SOI EiceDRIVER™ offers superior robustness
Infineon Technologies AG broadens its level-shift EiceDRIVER™ portfolio with a 1200 V three-phase gate driver. It is based on the company’s unique silicon-on-insulator (SOI) technology. The device provides leading negative VS transient immunity, superior latch-up immunity, fast over-current protection, and the monolithic integration of real bootstrap diodes. These unique features reduce BOM and enable a more robust design with a compact form factor suitable for industrial drives and embedded inverter applications.
.....
Infineon adds 40 V device in PQFN to its OptiMOS™ Source-Down power MOSFET family
Contemporary power system designs demand high power density levels and small form factors to maximize system-level performance. Infineon Technologies AG tackles this challenge by focusing on system innovation with enhancements on the component level. Adding to the 25 V device introduced in February, Infineon now brings the OptiMOS™ 40 V low-voltage power MOSFET to the market.
.....
Infineon adds 40 V device in PQFN to its OptiMOS™ Source-Down power MOSFET family
QPL-qualified SupIR-SMD package for rad hard MOSFETs enables higher performing space power systems 
QPL-qualified SupIR-SMD package for rad hard MOSFETs enables higher performing space power systems
Reliably attaching surface mount hermetic power packages to PCBs is a common challenge faced by space system designers.
.....
CoolSiC™ MOSFET 1700 V SMD enables best efficiency and reduced complexity for high voltage auxiliary power supplies
Infineon Technologies AG complements its CoolSiC™ MOSFET offering with yet another voltage class. Having added 650 V to the portfolio earlier this year, the company is now launching the 1700 V class with its proprietary trench semiconductor technology.
.....
CoolSiC™ MOSFET 1700 V SMD enables best efficiency and reduced complexity for high voltage auxiliary power supplies
Secured connectivity and blockchain technology for data-driven supply chains
Secured connectivity and blockchain technology for data-driven supply chains
Industrial supply chain solutions like digital twins, usage-based pricing models, product warranties or licensing solutions increasingly require reliable and auditable sensor and process data. Yet security is paramount, especially when data is transferred from one company or organization to another.
.....
Safety in cars: Infineon’s AURIX™ is the first embedded safety controller worldwide to be ASIL-D certified according to ISO 26262:2018
.....
Safety in cars: Infineon’s AURIX™ is the first embedded safety controller worldwide to be ASIL-D certified according to ISO 26262:2018
CES 2020: Infineon presents the world’s smallest 3D image sensor for face authentication and photo effects on smartphones and the like
CES 2020: Infineon presents the world’s smallest 3D image sensor for face authentication and photo effects on smartphones and the like
Munich/Las Vegas, Germany/USA, 6 January 2020 – Reliable face authentication, improved photo functions and authentic augmented reality experiences: 3D depth sensors assume a key role in smartphones and for applications that rely on accurate 3D image data.
.....
3D image sensor: Infineon enables easy smartphone unlock by face recognition
One megatrend feature in mobile communications is to unlock smartphones by 3D face recognition instead of fingerprint or PIN. Making authentication more convenient and more secure, it may soon become indispensable for mobile payment applications and mobile ID. With the 3D image sensor chip from Infineon Technologies AG the unlock-with-your-face feature becomes smarter, faster and more reliable.
.....
3D image sensor: Infineon enables easy smartphone unlock by face recognition
New high voltage MOSFET for highly efficient low and high power applications
New high voltage MOSFET for highly efficient low and high power applications
Infineon Technologies AG extends its existing portfolio of CoolMOS™ technologies with the 600 V CoolMOS™ P7 and 600 V CoolMOS™ C7 Gold (G7) series. The product families are designed to operate at 600 V breakdown voltage and deliver improved superjunction MOSFET performance. They achieve unmatched power density in the respective target applications.
.....
Infineon enables new high-performance FPGA development platform
Infineon Technologies announced that its Digital Point-of-Load (PoL) DC-DC regulators with full PMBus capabilities are featured in the Kintex® UltraScale™ development board. A key driver for the design flexibility of the board is the superior PMBus connectivity of the IR3806x family. Configurations can be stored in internal memory. In addition, PMBus commands allow run-time control, fault status and telemetry.
.....
Infineon enables new high-performance FPGA development platform
EtherCAT® implementation made easy and cost-efficient with XMC4300 microcontrollers 
EtherCAT® implementation made easy and cost-efficient with XMC4300 microcontrollers
EtherCAT® implementation complexity and cost can be reduced with the XMC4300 microcontroller series of Infineon Technologies AG. Without compromise to EtherCAT communication features, the XMC4300 has been specifically developed for cost-sensitive industrial applications that also make high demands on design flexibility, connectivity and real-time performance.
.....
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