Infineon’s 500V CoolMOS™ CE combines all
benefits of modern Superjunction MOSFETs: low area specific on-state resistance,
reduced switching losses and high body diode ruggedness.
“Leading performance, field proven reliability and consistent supply capability
created customer confidence in high quality and continued innovation underlying
CoolMOS™ technology,” says Jan-Willem Reynaerts, Product Segment Head of High
Voltage Power Conversion at Infineon Technologies. “The new 500V portfolio
enables our customers to reach higher energy efficiency levels while at the same
time offering a very attractive price-performance ratio, which makes this new
set of CoolMOS™ CE devices an excellent alternative to standard MOSFETs in
Using Superjunction technology provides improved efficiency especially at light
load conditions – thus, this new series of CoolMOS™ CE represents an
energy-efficient and cost attractive alternative to standard MOSFETs. The low
area specific on-state resistance (RDS(on) *A) enables lower
conduction losses, reduces energy stored in output capacitance (Eoss)
and minimizes switching losses. Lower gate charge (Qg) improves light
load efficiency while not compromising full load efficiency. This, combined with
the outstanding quality and reliability of CoolMOS™ technology, provides lower
system cost and a reduced cost of ownership. High body diode ruggedness and
reduced reverse recovery charge (Qrr) make it the perfect solution
for soft switching applications. The new devices are easy to design in and to
use given their nicely controllable switching behavior.
Availability and Pricing
First samples of 500V CoolMOS™ CE in 280mOhm and 500mOhm Rds(on) in
TO-220 package are available. By May 2012, first samples of 500V devices in
280mOhm, 500mOhm and 950mOhm Rds(on) in DPAK and TO-220 FullPAK
packages will be available. First OEM ramp-ups are expected in May 2012.
Engineering sample is US $1.12 per piece (IPP50R280CE; 500V, 280mOhm in TO-220).
Further information on Infineon’s new 500V CoolMOS™ CE is available at