MMRF5017HS RF Power GaN Transistor

NXP’s MMRF5017HS high gain and high ruggedness make this device ideally suited for continuous wave, pulse, and broadband RF applications

NXP's MMRF5017HS 125 W RF power GaN transistor is capable of broadband operation from 30 MHz to 2200 MHz and is ideally suited for CW, pulse, and broadband RF applications. Performance is guaranteed for applications operating in the 30 MHz to 2200 MHz band.

Features
Advanced GaN on SiC, offering high power density Decade bandwidth performance Input matched for extended wideband performance		High ruggedness: > 10:1 VSWR RoHS compliant
Applications
Public mobile radios, including emergency service radios Industrial, scientific, and medical		Wideband laboratory amplifiers Wireless cellular infrastructure

MMRF5017HS RF Power GaN Transistor

	Image	Manufacturer Part Number	Description		View Details
		MMRF5017HSR5	GAN 2.2GHZ 250W NI400S4S

2018081204 / 21.08.2018 / Electronic-components / Digi-Key Electronics /