Transistor drivers with high-side and low-side referenced outputs

TME offer now includes a new IX2113 integrated circuit by IXYS. It is designed to control a MOSFET or IGBT type transistor gateway, where high switching speed is important. The output circuit is composed of two independent high-side and low-side referenced channels capable of sourcing and sinking 2A.

The driver is extremely robust and practically immune to dV/dt voltage transients. This is all thanks to IXYS' use of a specific technological process: high-voltage BCDMOS on SOI (silicon on insulator) substrate. BCD (Bipolar-CMOS-DMOS) is a key technology in power ICs. A single chip combines the advantages of bipolar systems for analogue solutions, CMOS systems for digital applications as well as DMOS systems for high voltage and power applications.

Other features:

• immunity to dV/dt voltage transients
• 3.3V logic compatible
• UVLO – undervoltage lockout for both high-side and low-side outputs  

Voltage class:	+600V
Current efficiency:	-2A/+2A
Delay matching:	20ns

 
Discover the IX2113 driver available in SMD and THT version »

 

Symbol	Description
IX2113B	IC:driver;high-/low-side,gate driver;-2÷2A; Channels:2
IX2113G	IC:driver;high-/low-side,gate driver;-2÷2A;Channels:2

2020071502 / 15.07.2020 / Electronic-components / Transfer Multisort Elektronik Sp. z o.o. /