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Rugged AEC-Q101 MOSFETs from Nexperia offer guaranteed repetitive avalanche performance tested to one billion cycles
Dual-MOSFET devices simplify automotive solenoid control circuits by saving space, reducing component count and improving reliability.

Nexperia, the expert in essential semiconductors, today launched a new AEC-Q101-qualified Repetitive Avalanche Application Specific FET (ASFET) portfolio focused on powertrain applications. The technology has been tested to one billion avalanche cycles and can be used to control automotive inductive loads such as solenoids and actuators. In addition to providing a faster turn-off time (up to 4X), designs can be simplified through a reduced BOM count.

MOSFET-based power schemes for solenoid and actuator control in automotive powertrains are typically built around boost, free-wheel diode or active clamp topologies. A fourth option is a repetitive avalanche design that dissipates energy from the inductive load by making use of the MOSFET’s ability to repeatedly handle current from the inductive load during switch off. Offering comparable efficiencies to active clamp alternatives, such designs eliminate the need for diodes and other devices to minimize component count and circuit complexity. They also support faster switch-off times, a factor that can extend the reliability of electromechanical components such as solenoids and relays. Until now this has only been possible using outdated planar technology. The Nexperia Automotive Repetitive Avalanche ASFET family of products have been specifically developed to address this issue, by guaranteeing repetitive avalanche functionality tested up to one billion cycles.  In addition, when compared to boost topologies, they can simplify designs by providing up to 30% component footprint efficiency due to a possible reduction of up to 15 board components.

Fully automotive qualified to AEC-Q101 at 175 °C, the new MOSFETs are available in 40 V and 60 V options with typical RDS(ON) ratings from 12.5 mΩ to 55 mΩ. All of the devices are supplied in the company’s space-saving LFPAK56D (Dual Power-SO8) copper-clip package technology. The highly robust package features gull wing leads for increased board level reliability, and improved manufacturability including automated optical inspection (AOI).

Explains Nexperia’s Product Manager, Richard Ogden “Typically, engineers looking to implement repetitive avalanche topologies have had to rely on devices that use older, planar semiconductor technologies. Offering automotive-qualified devices with guaranteed repetitive avalanche capabilities that are based on higher performance silicon structures will increase the number of powertrain designs that can take advantage of repetitive avalanche functionality.”

For more information, including Quick Learning videos, visit www.nexperia.com/products/mosfets/application-specific-mosfets/automotive-asfets-for-repetitive-avalanche

2020120901 / 09.12.2020 / Electronic-components / NEXPERIA /

USB4 ESD devices from Nexperia provide optimum balance of protection and performance
TrEOS based protection offers industry-leading insertion and return loss to help meet tight system budgets

Nexperia launches new portfolio of application specific MOSFETs (ASFETs) for automotive airbags
Provides excellent transient linear mode performance using new SOA trench technology in LFPAK packaging providing designers with a smaller and more reliable choice.

Nexperia widens its offering of discrete components in miniature DFN packaging with side-wettable flanks
Rugged and reliable devices are AEC-Q101 compliant and save board space

Nexperia’s 50 µA Zener diodes portfolio extends battery-time and saves PCB space
The comprehensive product range covers every application from 1.8 V to 75 V

Nexperia introduces a range of A-selection Zener diodes for precise voltage reference with the industry’s lowest tolerance of ±1%
The comprehensive product range covers every application from 2.4 V to 75 V

Nexperia expands its wide bandgap semiconductor offering with new family of high-performance Silicon Carbide (SiC) Diodes
Samples of industrial-grade 650 V, 10 A SiC Schottky diode now available. Parts with 1200 V / 6-20 A current range and automotive-grade parts also planned

Nexperia delivers extremely low clamping bidirectional ESD protection devices for USB4 standard interfaces
TrEOS diodes offer industry-leading insertion loss and return loss characteristics for more robust USB4TM data transmission

Nexperia surface-mount device passes Board Level Reliability requirements for automotive application
Reliable and rugged CFP15B clip-bond FlatPower package selected by leading Tier 1 automotive supplier for use on an engine control unit

Nexperia launches ‘Power Live’ September 21-23 2021
Participate in live discussions on GaN, MOSFETs, power diodes and bipolar transistors for automotive and industrial applications; View on-demand video demos direct from Nexperia’s labs

Nexperia receives Bosch Global Supplier Award for the second time in a row
The prestigious award for ‘Purchasing of direct materials – Mobility Solutions’ recognizes Nexperia’s collaborative partnership with Bosch

Nexperia’s new Application-Specific MOSFETs (ASFETs) for hot-swap increase SOA by 166% and slash PCB footprint by 80%
New 80V & 100V devices minimize derating and improve current sharing for optimum performance, high reliability and reduced system cost

World’s smallest and thinnest standard logic DHXQFN packages from Nexperia in 14, 16, 20 and 24 pins
New packages enable large logic functions to be included in small form factor systems

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