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Nexperia’s 650 V GaN FETs enable 80 PLUS ® Titanium-class power supplies operating at 2 kW and above

Nexperia’s 650 V GaN FETs enable 80 PLUS ® Titanium-class power supplies operating at 2 kW and above

Power GaN solution reduces component count, shrinks form factor & minimizes system costs

Nexperia, the expert in essential semiconductors, today announced volume availability of its second-generation 650 V power GaN FET device family, offering significant performance advantages over previous technologies and competitive devices. With RDS(on) performance down to 35 mΩ (typical), the new power GaN FETs target single phase AC/DC and DC/DC industrial switched mode power supplies (SMPS), ranging from 2 kW to 10 kW, especially server and telecoms supplies that must meet 80 PLUS® Titanium efficiency regulations. The devices are also an excellent fit for solar inverters and servo drives in the same power range. 

Available in TO-247 packaging, the new 650V H2 power GaN FETs deliver a 36% shrinkage in die size for a given RDS(on) value, for better stability and efficiency. The cascode configuration eliminates the need for complicated drivers, speeding time to market. The devices deliver outstanding performance in both hard-switching and soft-switching configurations, offering designers maximum flexibility.

Dilder Chowdhury, Nexperia’s GaN Strategic Marketing Director explains: “Titanium is the most demanding of the 80 PLUS® specifications, requiring >91 % efficiency under full load conditions (>96% at 50% load). Achieving this level of performance in server power applications operating at 2 kW and above, using conventional silicon components, is complex and challenging. Nexperia’s new power GaN FETs are ideally suited to an elegant, bridgeless totem pole configuration that uses fewer components and reduces both physical size and costs.”

The Nexperia GAN041-650WSB GaN FETs are now available in high volume. 

For more information, including product datasheets and quick learning videos, visit https://www.nexperia.com/products/gan-fets.html

Designers can see Nexperia GaN FETs in action by visiting Nexperia’s booth at PCIM Digital Days 3 – 7 May. https://pcim.mesago.com

2021042701 / 27.04.2021 / Electronic-components / NEXPERIA /

New Trench Schottky rectifiers from Nexperia increase efficiency for fast switching applications
New Trench Schottky rectifiers from Nexperia increase efficiency for fast switching applications
AEC-Q101 approved devices up to 100 V and 20 A combine low switching losses and increased safe operating area
.....
Nexperia’s 650 V GaN FETs enable 80 PLUS ® Titanium-class power supplies operating at 2 kW and above
Power GaN solution reduces component count, shrinks form factor & minimizes system costs
.....
Nexperia’s 650 V GaN FETs enable 80 PLUS ® Titanium-class power supplies operating at 2 kW and above
Nexperia announces new ESD protection devices for high-speed interfaces in automotive applications
Nexperia announces new ESD protection devices for high-speed interfaces in automotive applications
High performance 4-channel ESD protection for automotive multimedia and video link applications offering ideal signal integrity
.....
Nexperia and United Automotive Electronic Systems Co., Ltd. Agree Comprehensive Partnership for Gallium Nitride
Program will address the technical requirements for the power systems in electric vehicles
.....
Nexperia and United Automotive Electronic Systems Co., Ltd. Agree Comprehensive Partnership for Gallium Nitride
Nexperia extends LFPAK56D MOSFET line-up with AEC-Q101-qualified half-bridge package
Nexperia extends LFPAK56D MOSFET line-up with AEC-Q101-qualified half-bridge package
Space-saving LFPAK56D half-bridge offers 60 % lower parasitic inductance and improved thermal performance for power train, motor control and DC/DC application
.....
Nexperia announces plans to grow global production and increase R&D spend
New investments support global strategy to address growing demand for power semiconductors and boost GaN capabilities
.....
Nexperia announces plans to grow global production and increase R&D spend
Nexperia launches compact ‘2 in 1’ protection for high-speed data lines
Nexperia launches compact ‘2 in 1’ protection for high-speed data lines
Nexperia announced three new TrEOS protection devices that provide the most compact method to suppress ESD in USB3.2, HDMI2.1 and other high-speed data lines. The new PUSB3BB2DF, PESD5V0C2BDF, PESD4V0Z2BCDF devices provide best-in-class ESD protection and system robustness by combining high RF performance with very low clamping and very high surge capability.
.....
Nexperia leads with industry’s first 80 V RETs for 48 V automotive and other higher voltage bus circuits
Nexperia announced industry’s first 80 V RET (Resistor-Equipped Transistor) family. These new RETs or ‘digital transistors’ provide enough headroom for use in 48 V automotive board net (e.g. mild hybrid and EV cars) and other higher voltage circuits which are often subject to large spikes and pulses that previous 50 V parts cannot handle.
.....
Nexperia leads with industry’s first 80 V RETs for 48 V automotive and other higher voltage bus circuits
Rugged AEC-Q101 MOSFETs from Nexperia offer guaranteed repetitive avalanche performance tested to one billion cycles
Rugged AEC-Q101 MOSFETs from Nexperia offer guaranteed repetitive avalanche performance tested to one billion cycles
Dual-MOSFET devices simplify automotive solenoid control circuits by saving space, reducing component count and improving reliability.
.....
Nexperia launches AEC-Q101-qualified, leadless CAN-FD protection diodes with industry-leading ESD performance
Nexperia, the expert in essential semiconductors, has announced new leadless ESD protection devices for CAN-FD applications. Devices are available in leadless packages with side-wettable flanks that enable AOI tools to be used. Fully AEC-Q101-qualified, the PESD2CANFDx series parts also offer industry-leading ESD and RF performance, and save PCB space.
.....
Nexperia launches AEC-Q101-qualified, leadless CAN-FD protection diodes with industry-leading ESD performance
Nexperia establishes new Application Specific FET category to deliver optimized performance
Nexperia establishes new Application Specific FET category to deliver optimized performance
‘ASFETs’ feature MOSFET parameters tailored for particular applications
.....
Nexperia launches industry-first LED drivers in DFN package with side-wettable flanks
AEC-Q101-qualified DFN2020D-6 devices save up to 90% PCB space; side-wettable flanks enable automated inspection (AOI) and improve reliability
.....
Nexperia launches industry-first LED drivers in DFN package with side-wettable flanks
Nexperia launches Common Mode Filter with ESD protection for HDMI2.1 and DisplayPort
Nexperia launches Common Mode Filter with ESD protection for HDMI2.1 and DisplayPort
Nexperia, the expert in essential semiconductors, has announced its new PCMFxHDMI2BA-C, a combined, highly efficient, common mode filter and ESD protection device with the widest 10 GHz differential bandwidth. It is suitable for the latest HDMI 2.1 standard up to 12G FRL, where eye-diagram tests were passed even with “worst cable model”.
.....
New automotive TrEOS ESD protection from Nexperia combines high signal integrity, low clamping voltage and high surge robustness
Industry-benchmark performance devices now AEC-Q101 qualified - protecting infotainment, multimedia and ADAS systems.
.....
New automotive TrEOS ESD protection from Nexperia combines high signal integrity, low clamping voltage and high surge robustness
Nexperia launches ‘Power Live’ July 2nd & 3rd 2020
Nexperia launches ‘Power Live’ July 2nd & 3rd 2020
Nexperia, the expert in essential semiconductors, today announced ‘Power Live’ a virtual conference on the 2nd and 3rd of July which will cover a wide range of subjects related to power electronics including GaN devices, Silicon Germanium (SiGe) rectifiers, automotive applications and packaging technology.
.....
Nexperia delivers widest range of AEC-Q101 discretes in miniature, leadless rugged DFN packages
Nexperia today announced the industry’s widest portfolio of automotive-qualified discretes in space-saving, thermally-efficient, AOI-compatible DFN (Discrete Flat No leads) packages. The AEC-Q101 range of devices available cuts across all Nexperia’s product groups and includes switching, Schottky, Zener and protection diodes, bipolar junction transistors (BJTs), N- and P-channel MOSFETs, resistor-equipped transistors and LED drivers.
.....
Nexperia delivers widest range of AEC-Q101 discretes in miniature, leadless rugged DFN packages
Nexperia announces next generation 650 V Gallium Nitride (GaN) Technology
Nexperia announces next generation 650 V Gallium Nitride (GaN) Technology
Next-gen GaN technology targets automotive, 5G and datacenter applications; Devices available packaged in TO-247 and innovative Copper Clip SMD
.....
Silicon Germanium (SiGe) rectifiers from Nexperia combine cutting-edge high efficiency, thermal stability and space-savings
AEC-Q101 approved devices with 120 V, 150 V, and 200 V combine best attributes of Schottky and fast recovery diodes
.....
Silicon Germanium (SiGe) rectifiers from Nexperia combine cutting-edge high efficiency, thermal stability and space-savings
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BATTERY JAPAN, Osaka, 29.9.-1.10.2021
DistribuTECH, 25.1.-27.1.2022, Dallas, TX
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