Mitsubishi Electric to Ship Samples of Four New Trench SiC-MOSFET Bare Dies for Power Semiconductors

Advanced bare dies for diverse embedding needs, enabling lower power consumption in power electronics equipment

TOKYO, January 14, 2026 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today that, beginning January 21, it will start shipping samples of four new trench¹ silicon carbide metal-oxide-semiconductor field-effect transistor (SiC-MOSFET) bare dies (chips not encased in protective housing) designed for use in power electronics equipment, such as electric vehicle (EV) traction inverters,² onboard chargers,³ and power supply systems for renewable energy sources including solar power. These new power semiconductor bare dies will contribute to efforts to embed advanced bare dies in various power electronics equipment to lower power consumption while maintaining performance.

Mitsubishi Electric will exhibit the new trench SiC-MOSFET bare dies at the 40th Nepcon Japan R&D and Manufacturing show in Tokyo from January 21 to 23, as well as exhibitions in North America, Europe, China, India and elsewhere.

The market for power electronics equipment is expected to expand in line with global efforts targeting decarbonization. As part of this trend, the demand is growing for power semiconductors embedded with highly efficient bare dies that enable EV traction inverters and renewable-energy power supply systems to consume less power while maintaining their high performance and quality.

Since 2010, Mitsubishi Electric has been selling SiC power semiconductor modules that significantly reduce the power consumption of air conditioners, industrial equipment and railway vehicle inverter systems. To meet the demand for advanced power semiconductor bare dies, Mitsubishi Electric is now introducing four new trench SiC-MOSFET bare dies that are similar to the company’s existing trench SiC-MOSFET bare dies,⁴ but utilize a proprietary trench SiC-MOSFET structure to reduce power loss by approximately 50%⁵ compared to planar⁶ SiC-MOSFETs. Furthermore, manufacturing processes including Mitsubishi Electric’s proprietary gate oxide film manufacturing method suppress variations in power loss and on-resistance to ensure stable quality over a long period of use.

 

https://www.mitsubishielectric.com/en/pr/2026/pdf/0114-b.pdf
https://www.mitsubishielectric.com/en/pr/2026/0114-b/

 

2026011901 / 19.01.2026 / Electronic-components / Mitsubishi Electric /